Table 1. Summary of vertical 3-terminal artificial synaptic device

Device type	Permeable source material	Electrolyte material	Channel length, channel area	Electrical characteristics	Minimum energy consumption	Maximum current density	Ref
Field transmission	Ag nanowire	-	65 nm, −	On/off ratio: 104 Threshold voltage: −1.35 V	10 fJ	-	[12]
		-	105 nm, 200×200 μm2	Memory window: 52 V, Memory ratio: 105	-	-	[13]
	SWCNT	-	150 nm, −	Working drain voltage: 10 μV	1.3 fJ		[10]
Ion migration	-	[EMIM][TFSI]*	40 nm, 2×80×80 nm2	On/off ratio: Minimum working drain voltage: −10 μV	~100 fJ	2.7 MAcm−2	[23]
	-		55 nm, 50×50 μm2	On/off ratio: 105	11.9/1.6 nJ for the potentiation/ depression pulse		[11]
	-	PEO/LiClO4	150 nm, 0.83 μm2	Minimum working drain voltage: 0.01 V	6.16 pJ	10 KAcm−2	[24]